Luis Carlos Ortiz-Dosal, Gabriela Ángeles-Robles, Eleazar Samuel Kolosovas-Machuca
Journal: Journal of immunoassay & immunochemistry 2018;39(5):471-484
PMID: 30188776
Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored.
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